Copper Nitride: A Versatile Semiconductor with Great Potential for Next-Generation Photovoltaics

Copper nitride (Cu3N) has gained significant attention recently due to its potential in several scientific and technological applications. This study focuses on using Cu3N as a solar absorber photovoltaic technology. thin films were deposited glass substrates silicon wafers via radio-frequency magnetron sputtering at different nitrogen flow ratios with total pressures ranging from 1.0 5.0 Pa. The films’ structural, morphology, chemical properties determined XRD, Raman, AFM, SEM/EDS techniques. results revealed that the exhibited polycrystalline structure, preferred orientation varying 100 111 depending working pressure employed. Raman spectroscopy confirmed presence of Cu-N bonds characteristic peaks observed 618–627 cm−1 range, while SEM AFM images uniform smooth surface morphologies. optical investigated UV-VIS-NIR photothermal deflection (PDS). obtained band gap, refractive index, Urbach energy values demonstrated promising for films, indicating their absorbers highlights favourable RF method, paving way implementation thin-film technologies. These findings contribute progress optimisation Cu3N-based materials efficient conversion.